Spontaneous open-circuit voltage gain of fully fabricated organic solar cells caused by elimination ofinterfacial energy disorder
作者:Sun, R (Sun, Rui)[ 1 ] ; Deng, D (Deng, Dan)[ 2 ] ; Guo, J (Guo, Jing)[ 1 ] ; Wu, Q (Wu, Qiang)[ 1 ] ; Guo, J (Guo, Jie)[ 1 ] ; Shi, MM (Shi, Mumin)[ 1 ] ; Shi, K (Shi, Kui)[ 3,4 ] ; Wang, T (Wang, Tao)[ 5 ] ; Xue, LJ (Xue, Longjian)[ 3,4 ] ; Wei, ZX (Wei, Zhixiang)[ 2 ] ...更多内容
ENERGY & ENVIRONMENTAL SCIENCE
卷: 12
期: 8
DOI: 10.1039/c9ee00825j
出版年: AUG 1 2019
文献类型:Article
摘要
The realization of high open-circuit voltage (V-oc) in organic solar cells (OSCs) mainly depends on the delicate donor (D) and acceptor (A) structures, meticulously optimized bulk heterojunction (BHJ) microstructure and functionalized interfacial materials. In this work, we demonstrate a spontaneous V-oc gain in efficient OSCs without sacrificing the short-circuit current (J(sc)) and fill factor (FF). Using a combination of device studies and morphological analysis, we point out that the spontaneous phenomenon occurred at the bottom of the BHJ layer, which is caused by [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) acceptors spontaneously migrating to the BHJ/ZnO interface under ambient conditions. Furthermore, physical characterization determines the relation between morphology evolution and spontaneous V-oc enhancement, which mainly results from the eliminated energetic disorder at the BHJ/ZnO interface. The investigation of surface energy parameters among selected components highlights the wetting coefficient as a dominant dynamic for this spontaneous phenomenon. Besides, a wide range of photovoltaic systems introduced for enabling parallel verification also confirm the effect of the interfacial surface energy on V-oc spontaneous enhancement in inverted solar cells. These findings exemplify the importance of surface energy modification as a tool for improved interfaces of layered morphology, and open new routes to device interfacial optimization using novel design strategies of photoactive materials and interfacial materials. Such a spontaneous phenomenon may open a novel field for making materials work in an intelligent way in organicelectronics.
关键词
KeyWords Plus:BULK-HETEROJUNCTION; SURFACE-ENERGY; EFFICIENCY; LAYER; PERFORMANCE; MORPHOLOGY; BLENDS; POLYCARBONATE; RECOMBINATION; RESISTANCE
作者信息
通讯作者地址: Min, J (通讯作者)
Wuhan Univ, Inst Adv Studies, Wuhan 430072, Hubei, Peoples R China.
通讯作者地址: Wei, ZX (通讯作者)
Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China.
原文PDF链接:
https://pubs.rsc.org/en/content/articlelanding/2019/EE/C9EE00825J#!divAbstract